Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas-solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic-organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757907
Carbon (C) is a crucial material for many branches of modern technology. A growing number of demanding applications in electronics and telecommunications rely on the unique properties of C allotropes. The need for microwave absorbers and radar-absorbing materials is ever growing in military applications (reduction of radar signature of aircraft, ships, tanks, and targets) as well as in civilian applications (reduction of electromagnetic interference among components and circuits, reduction of the back-radiation of microstrip radiators). Whatever the application for which the absorber is intended, weight reduction and optimization of the operating bandwidth are two important issues. A composite absorber that uses carbonaceous particles in combination with a polymer matrix offers a large flexibility for design and properties control, as the composite can be tuned and optimized via changes in both the carbonaceous inclusions (C black, C nanotube, C fiber, graphene) and the embedding matrix (rubber, thermoplastic). This paper offers a perspective on the experimental efforts toward the development of microwave absorbers composed of carbonaceous inclusions in a polymer matrix. The absorption properties of such composites can be tailored through changes in geometry, composition, morphology, and volume fraction of the filler particles. Polymer composites filled with carbonaceous particles provide a versatile system to probe physical properties at the nanoscale of fundamental interest and of relevance to a wide range of potential applications that span radar absorption, electromagnetic protection from natural phenomena (lightning), shielding for particle accelerators in nuclear physics, nuclear electromagnetic pulse protection, electromagnetic compatibility for electronic devices, high-intensity radiated field protection, anechoic chambers, and human exposure mitigation. Carbonaceous particles are also relevant to future applications that require environmentally benign and mechanically flexible materials.
Nanofluids-a simple product of the emerging world of nanotechnology-are suspensions of nanoparticles (nominally 1-100 nm in size) in conventional base fluids such as water, oils, or glycols. Nanofluids have seen enormous growth in popularity since they were proposed by Choi in 1995. In the year 2011 alone, there were nearly 700 research articles where the term nanofluid was used in the title, showing rapid growth from 2006 (175) and 2001 (10). The first decade of nanofluid research was primarily focused on measuring and modeling fundamental thermophysical properties of nanofluids (thermal conductivity, density, viscosity, heat transfer coefficient). Recent research, however, explores the performance of nanofluids in a wide variety of other applications. Analyzing the available body of research to date, this article presents recent trends and future possibilities for nanofluids research and suggests which applications will see the most significant improvement from employing nanofluids. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754271
In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.
Temperature-dependent dielectric permittivity of 0.94(Bi1/2Na1/2) TiO3-0.06BaTiO(3) (BNT-6BT) lead-free piezoceramics was studied to disentangle the existing unclear issues over the crystallographic aspects and phase stability of the system. Application of existing phenomenological relaxor models enabled the relaxor contribution to the entire dielectric permittivity spectra to be deconvoluted. The deconvoluted data in comparison with the temperature-dependent dielectric permittivity of a classical perovskite relaxor, La-modified lead zirconate titanate, clearly suggest that BNT-6BT belongs to the same relaxor category, which was also confirmed by a comparative study on the temperature-dependent polarization hysteresis loops of both materials. Based on these results, we propose that the low-temperature dielectric anomaly does not involve any phase transition such as ferroelectric-toantiferroelectric. Supported by transmission electron microscopy and X-ray diffraction experiments at ambient temperature, we propose that the commonly observed two dielectric anomalies are attributed to thermal evolution of ferroelectric polar nanoregions of R3c and P4bm symmetry, which coexist nearly throughout the entire temperature range and reversibly transform into each other with temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3645054
Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100 mm in diameter and 200 mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macrosymmetry, and domain size. Finally, relaxor-PT single crystals are reviewed with respect to specific applications and contrasted to conventional piezoelectric ceramics. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679521
Ferroelectrics are essential components in a wide range of applications, including ultrasonic transducers, sensors, and actuators. In the single crystal form, relaxor-PbTiO 3 (PT) piezoelectric materials have been extensively studied due to their ultrahigh piezoelectric and electromechanical properties. In this article, a perspective and future development of relaxor-PT crystals are given. Initially, various techniques for the growth of relaxor-PT crystals are reviewed, with crystals up to 100mm in diameter and 200mm in length being readily achievable using the Bridgman technique. Second, the characterizations of dielectric and electromechanical properties are surveyed. Boundary conditions, including temperature, electric field, and stress, are discussed in relation to device limitations. Third, the physical origins of the high piezoelectric properties and unique loss characteristics in relaxor-PT crystals are discussed with respect to their crystal structure, phase, engineered domain configuration, macrosymmetry, and domain size. Finally, relaxor-PT single crystals are reviewed with respect to specific applications and contrasted to conventional piezoelectric ceramics.
The electron mean free path λ and carrier relaxation time τ of the twenty most conductive elemental metals are determined by numerical integration over the Fermi surface obtained from first-principles, using constant λ or τ approximations and wave-vector dependent Fermi velocities vf ( k ). The average vf deviates considerably from the free-electron prediction, even for elements with spherical Fermi surfaces including Cu (29% deviation). The calculated product of the bulk resistivity times λ indicates that, in the limit of narrow wires, Rh, Ir, and Ni are 2.1, 1.8, and 1.6 times more conductive than Cu, while various metals including Mo, Co, and Ru approximately match the Cu resistivity, suggesting that these metals are promising candidates to replace Cu for narrow interconnect lines.
Phase stability is an important topic for high entropy alloys (HEAs), but the understanding to it is very limited. The capability to predict phase stability from fundamental properties of constituent elements would benefit the alloy design greatly. The relationship between phase stability and physicochemical/thermodynamic properties of alloying components in HEAs was studied systematically. The mixing enthalpy is found to be the key factor controlling the formation of solid solutions or compounds. The stability of fcc and bcc solid solutions is well delineated by the valance electron concentration ( VEC ). The revealing of the effect of the VEC on the phase stability is vitally important for alloy design and for controlling the mechanical behavior of HEAs.
Dielectric elastomer (DE) actuators are popularly referred to as artificial muscles because their impressive actuation strain and speed, low density, compliant nature, and silent operation capture many of the desirable physical properties of muscle. Unlike conventional robots and machines, whose mechanisms and drive systems rapidly become very complex as the number of degrees of freedom increases, groups of DE artificial muscles have the potential to generate rich motions combining many translational and rotational degrees of freedom. These artificial muscle systems can mimic the agonist-antagonist approach found in nature, so that active expansion of one artificial muscle is taken up by passive contraction in the other. They can also vary their stiffness. In addition, they have the ability to produce electricity from movement. But departing from the high stiffness paradigm of electromagnetic motors and gearboxes leads to new control challenges, and for soft machines to be truly dexterous like their biological analogues, they need precise control. Humans control their limbs using sensory feedback from strain sensitive cells embedded in muscle. In DE actuators, deformation is inextricably linked to changes in electrical parameters that include capacitance and resistance, so the state of strain can be inferred by sensing these changes, enabling the closed loop control that is critical for a soft machine. But the increased information processing required for a soft machine can impose a substantial burden on a central controller. The natural solution is to distribute control within the mechanism itself. The octopus arm is an example of a soft actuator with a virtually infinite number of degrees of freedom (DOF). The arm utilizes neural ganglia to process sensory data at the local "arm" level and perform complex tasks. Recent advances in soft electronics such as the piezoresistive dielectric elastomer switch (DES) have the potential to be fully integrated with actuators and sensors. With the DE switch, we can produce logic gates, oscillators, and a memory element, the building blocks for a soft computer, thus bringing us closer to emulating smart living structures like the octopus arm. The goal of future research is to develop fully soft machines that exploit smart actuation networks to gain capabilities formerly reserved to nature, and open new vistas in mechanical engineering. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4740023
This article reports on the International Nanofluid Property Benchmark Exercise, or INPBE, in which the thermal conductivity of identical samples of colloidally stable dispersions of nanoparticles or "nanofluids," was measured by over 30 organizations worldwide, using a variety of experimental approaches, including the transient hot wire method, steady-state methods, and optical methods. The nanofluids tested in the exercise were comprised of aqueous and nonaqueous basefluids, metal and metal oxide particles, near-spherical and elongated particles, at low and high particle concentrations. The data analysis reveals that the data from most organizations lie within a relatively narrow band (±10% or less) about the sample average with only few outliers. The thermal conductivity of the nanofluids was found to increase with particle concentration and aspect ratio, as expected from classical theory. There are (small) systematic differences in the absolute values of the nanofluid thermal conductivity among the various experimental approaches; however, such differences tend to disappear when the data are normalized to the measured thermal conductivity of the basefluid. The effective medium theory developed for dispersed particles by Maxwell in 1881 and recently generalized by Nan [ J. Appl. Phys. 81 , 6692 ( 1997 )] , was found to be in good agreement with the experimental data, suggesting that no anomalous enhancement of thermal conductivity was achieved in the nanofluids tested in this exercise.
Multiferroic magnetoelectric materials, which simultaneously exhibit ferroelectricity and ferromagnetism, have recently stimulated a sharply increasing number of research activities for their scientific interest and significant technological promise in the novel multifunctional devices. Natural multiferroic single-phase compounds are rare, and their magnetoelectric responses are either relatively weak or occurs at temperatures too low for practical applications. In contrast, multiferroic composites, which incorporate both ferroelectric and ferri-/ferromagnetic phases, typically yield giant magnetoelectric coupling response above room temperature, which makes them ready for technological applications. This review of mostly recent activities begins with a brief summary of the historical perspective of the multiferroic magnetoelectric composites since its appearance in 1972. In such composites the magnetoelectric effect is generated as a product property of a magnetostrictive and a piezoelectric substance. An electric polarization is induced by a weak ac magnetic field oscillating in the presence of a dc bias field, and/or a magnetization polarization appears upon applying an electric field. So far, three kinds of bulk magnetoelectric composites have been investigated in experimental and theoretical, i.e., composites of (a) ferrite and piezoelectric ceramics (e.g., lead zirconate titanate), (b) magnetic metals/alloys (e.g., Terfenol-D and Metglas) and piezoelectric ceramics, and (c) Terfenol-D and piezoelectric ceramics and polymer. The elastic coupling interaction between the magnetostrictive phase and piezoelectric phase leads to giant magnetoelectric response of these magnetoelectric composites. For example, a Metglas/lead zirconate titanate fiber laminate has been found to exhibit the highest magnetoelectric coefficient, and in the vicinity of resonance, its magnetoelectric voltage coefficient as high as 10 2 V ∕ cm Oe orders has been achieved, which exceeds the magnetoelectric response of single-phase compounds by many orders of magnitude. Of interest, motivated by on-chip integration in microelectronic devices, nanostructured composites of ferroelectric and magnetic oxides have recently been deposited in a film-on substrate geometry. The coupling interaction between nanosized ferroelectric and magnetic oxides is also responsible for the magnetoelectric effect in the nanostructures as was the case in those bulk composites. The availability of high-quality nanostructured composites makes it easier to tailor their properties through epitaxial strain, atomic-level engineering of chemistry, and interfacial coupling. In this review, we discuss these bulk and nanostructured magnetoelectric composites both in experimental and theoretical. From application viewpoint, microwave devices, sensors, transducers, and heterogeneous read/write devices are among the suggested technical implementations of the magnetoelectric composites. The review concludes with an outlook on the exciting future possibilities and scientific challenges in the field of multiferroic magnetoelectric composites.
To optimize the heating properties of magnetic nanoparticles (MNPs) in magnetic hyperthermia applications, it is necessary to calculate the area of their hysteresis loops in an alternating magnetic field. The separation between "relaxation losses" and "hysteresis losses" presented in several articles is artificial and criticized here. The three types of theories suitable for describing hysteresis loops of MNPs are presented and compared to numerical simulations: equilibrium functions, Stoner-Wohlfarth model based theories (SWMBTs), and a linear response theory (LRT) using the Néel-Brown relaxation time. The configuration where the easy axis of the MNPs is aligned with respect to the magnetic field and the configuration of a random orientation of the easy axis are both studied. Suitable formulas to calculate the hysteresis areas of major cycles are deduced from SWMBTs and from numerical simulations; the domain of validity of the analytical formula is explicitly studied. In the case of minor cycles, the hysteresis area calculations are based on the LRT. A perfect agreement between the LRT and numerical simulations of hysteresis loops is obtained. The domain of validity of the LRT is explicitly studied. Formulas are proposed to calculate the hysteresis area at low field that are valid for any anisotropy of the MNP. The magnetic field dependence of the area is studied using numerical simulations: it follows power laws with a large range of exponents. Then analytical expressions derived from the LRT and SWMBTs are used in their domains of validity for a theoretical study of magnetic hyperthermia. It is shown that LRT is only pertinent for MNPs with strong anisotropy and that SWMBTs should be used for weakly anisotropic MNPs. The optimum volume of MNPs for magnetic hyperthermia is derived as a function of material and experimental parameters. Formulas are proposed to allow to the calculation of the optimum volume for any anisotropy. The maximum achievable specific absorption rate (SAR) is calculated as a function of the MNP anisotropy. It is shown that an optimum anisotropy increases the SAR and reduces the detrimental effects of the size distribution of the MNPs. The optimum anisotropy is simple to calculate; it depends only on the magnetic field used in the hyperthermia experiments and the MNP magnetization. The theoretical optimum parameters are compared to those of several magnetic materials. A brief review of experimental results as well as a method to analyze them is proposed. This study helps in the determination of suitable and unsuitable materials for magnetic hyperthermia and provides accurate formulas to analyze experimental data. It is also aimed at providing a better understanding of magnetic hyperthermia to researchers working on this subject.
Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes and remedies proposed for droop mitigation are classified and reviewed. Droop mechanisms taken into consideration are Auger recombination, reduced active volume effects, carrier delocalization, and carrier leakage. The latter can in turn be promoted by polarization charges, inefficient hole injection, asymmetry between electron and hole densities and transport properties, lateral current crowding, quantum-well overfly by ballistic electrons, defect-related tunneling, and saturation of radiative recombination. Reviewed droop remedies include increasing the thickness or number of the quantum wells, improving the lateral current uniformity, engineering the quantum barriers (including multi-layer and graded quantum barriers), using insertion or injection layers, engineering the electron-blocking layer (EBL) (including InAlN, graded, polarization-doped, and superlattice EBL), exploiting reversed polarization (by either inverted epitaxy or N-polar growth), and growing along semi-or non-polar orientations. Numerical device simulations of a reference device are used through the paper as a proof of concept for selected mechanisms and remedies. (C) 2013 AIP Publishing LLC.
A common misconception is that the irradiation of solids with energetic electrons and ions has exclusively detrimental effects on the properties of target materials. In addition to the well-known cases of doping of bulk semiconductors and ion beam nitriding of steels, recent experiments show that irradiation can also have beneficial effects on nanostructured systems. Electron or ion beams may serve as tools to synthesize nanoclusters and nanowires, change their morphology in a controllable manner, and tailor their mechanical, electronic, and even magnetic properties. Harnessing irradiation as a tool for modifying material properties at the nanoscale requires having the full microscopic picture of defect production and annealing in nanotargets. In this article, we review recent progress in the understanding of effects of irradiation on various zero-dimensional and one-dimensional nanoscale systems, such as semiconductor and metal nanoclusters and nanowires, nanotubes, and fullerenes. We also consider the two-dimensional nanosystem graphene due to its similarity with carbon nanotubes. We dwell on both theoretical and experimental results and discuss at length not only the physics behind irradiation effects in nanostructures but also the technical applicability of irradiation for the engineering of nanosystems.
ZnO has emerged as a promising candidate for optoelectronic and microelectronic applications, whose development requires greater understanding and control of their electronic contacts. The rapid pace of ZnO research over the past decade has yielded considerable new information on the nature of ZnO interfaces with metals. Work on ZnO contacts over the past decade has now been carried out on high quality material, nearly free from complicating factors such as impurities, morphological and native point defects. Based on the high quality bulk and thin film crystals now available, ZnO exhibits a range of systematic interface electronic structure that can be understood at the atomic scale. Here we provide a comprehensive review of Schottky barrier and ohmic contacts including work extending over the past half century. For Schottky barriers, these results span the nature of ZnO surface charge transfer, the roles of surface cleaning, crystal quality, chemical interactions, and defect formation. For ohmic contacts, these studies encompass the nature of metal-specific interactions, the role of annealing, multilayered contacts, alloyed contacts, metallization schemes for state-of-the-art contacts, and their application to n -type versus p -type ZnO. Both ZnO Schottky barriers and ohmic contacts show a wide range of phenomena and electronic behavior, which can all be directly tied to chemical and structural changes on an atomic scale.
Zinc oxide (ZnO) is a wide band gap semiconductor with potential applications in optoelectronics, transparent electronics, and spintronics. The high efficiency of UV emission in this material could be harnessed in solid-state white lighting devices. The problem of defects, in particular, acceptor dopants, remains a key challenge. In this review, defects in ZnO are discussed, with an emphasis on the physical properties of point defects in bulk crystals. As grown, ZnO is usually n -type, a property that was historically ascribed to native defects. However, experiments and theory have shown that O vacancies are deep donors, while Zn interstitials are too mobile to be stable at room temperature. Group-III (B, Al, Ga, and In) and H impurities account for most of the n -type conductivity in ZnO samples. Interstitial H donors have been observed with IR spectroscopy, while substitutional H donors have been predicted from first-principles calculations but not observed directly. Despite numerous reports, reliable p -type conductivity has not been achieved. Ferromagnetism is complicated by the presence of secondary phases, grain boundaries, and native defects. The famous green luminescence has several possible origins, including Cu impurities and Zn vacancies. The properties of group-I (Cu, Li, and Na) and group-V (N, P, As, and Sb) acceptors, and their complexes with H, are discussed. In the future, doping of ZnO nanocrystals will rely on an understanding of these fundamental properties.
In this study, we create a multifunctional metal surface by producing a hierarchical nano/microstructure with femtosecond laser pulses. The multifunctional surface exhibits combined effects of dramatically enhanced broadband absorption, superhydrophobicity, and self-cleaning. The superhydrophobic effect is demonstrated by a falling water droplet repelled away from a structured surface with 30% of the droplet kinetic energy conserved, while the self-cleaning effect is shown by each water droplet taking away a significant amount of dust particles on the altered surface. The multifunctional surface is useful for light collection and water/dust repelling. (C) 2015 AIP Publishing LLC.
A microscopic model for impurity uptake at a sharp crystal-liquid interface during alloy solidification is presented in terms of the bulk properties of the liquid and solid phases. The results for stepwise growth and continuous growth at the same interface velocity differ quantitatively but exhibit the same qualitative features. A transition from equilibrium segregation to complete solute trapping occurs as the velocity surpasses the diffusive speed of solute in the liquid. The location of the transition varies little with equilibrium segregation coefficient, and a kinetic limit to solute trapping is found to be quite unlikely. Comparison is made with other models; critical differences are pointed out. Coupled with a growth velocity equation and with macroscopic heat- and solute-diffusion equations, the model forms a complete description of one-dimensional crystal growth.
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼ 1.9 μ m (0.64 eV for InN) to the ultraviolet at ∼ 0.36 μ m (3.4 eV for GaN) or 0.2 μ m (6.2 eV for AlN). The continuous range of bandgap energies now spans the near infrared, raising the possibility of new applications for group-III nitrides. In this article we present a detailed review of the physical properties of InN and related group III-nitride semiconductors. The electronic structure, carrier dynamics, optical transitions, defect physics, doping disparity, surface effects, and phonon structure will be discussed in the context of the InN bandgap re-evaluation. We will then describe the progress, perspectives, and challenges in the developments of new electronic and optoelectronic devices based on InGaN alloys. Advances in characterization and understanding of InN and InGaN nanostructures will also be reviewed in comparison to their thin film counterparts.