National Science Library, Chinese Academy of Sciences
  登录 机构网站 ENGLISH
您当前的位置是:首页->详细浏览

期刊名称: Nanotechnology
Volume:22    Issue:25        Page:254002-254002
ISSN:0957-4484

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook期刊论文

作者: Kim Kyung Min Jeong Doo Seok Hwang Cheol Seong
DOI:10.1088/0957-4484/22/25/254002

服务链接:
页码: 254002-254002
被引频次: 400
出版者: IOP Publishing,IOP PUBLISHING LTD
期刊名称: Nanotechnology
ISSN: 0957-4484
卷期: Volume:22    Issue:25
语言: English
摘要: This review article summarized the recent understanding of resistance switching (RS) behavior in several binary oxide thin film systems. Among the various RS materials and mechanisms, TiO2 and NiO thin films in unipolar thermo-chemical switching mode are primarily dealt with. To facilitate the discussions, the RS was divided into three parts; electroforming, set and reset steps. After short discussions on the electrochemistry of 'electrolytic' oxide materials, the general and peculiar aspects of these RS systems and mechanism are elaborated. Although the RS behaviors and characteristics of these materials are primarily dependent on the repeated formation and rupture of the conducting filaments (CFs) at the nanoscale at a localized position, this mechanism appears to offer a basis for the understanding of other RS mechanisms which were originally considered to be irrelevant to the localized events. The electroforming and set switching phenomena were understood as the process of CF formation and rejuvenation, respectively, which are mainly driven by the thermally assisted electromigration and percolation (or even local phase transition) of defects, while the reset process was understood as the process of CF rupture where the thermal energy plays a more crucial role. This review also contains several remarks on the outlook of these resistance change devices as a semiconductor memory.
相关主题: DEFECT STRUCTURE, PHYSICS, APPLIED, THERMAL DISSOLUTION MODEL, RRAM DEVICES, MATERIALS SCIENCE, MULTIDISCIPLINARY, NANOSCIENCE & NANOTECHNOLOGY, INSULATING FILMS, DENSITY NONVOLATILE MEMORY, TIO2 THIN-FILMS, PHASE-CHANGE MATERIALS, TRANSITION-METAL OXIDES, POLYCRYSTALLINE NIO FILMS, NEGATIVE RESISTANCE,

相关文献推荐:

问图书管理员更多图书管理员

学科咨询馆员
学科馆员

电话:
邮件:
问图书馆员

图标说明

在线获取原文 原文传递 详细信息 图书在架状态 图书馆际互借 问图书馆员

常见问题

图书馆开放时间 图书馆位置 借阅要求 您在使用中发现的任何错误,都可以向我们 【报告错误】,非常感谢!

作者信息:×