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期刊名称: Nanotechnology
Volume:24    Issue:21        Page:214006-214006
ISSN:0957-4484

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy期刊论文

作者: Joyce Hannah J Docherty Callum J Gao Qiang Tan H Hoe Jagadish Chennupati
DOI:10.1088/0957-4484/24/21/214006

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页码: 214006-214006
被引频次: 147
出版者: IOP PUBLISHING LTD
期刊名称: Nanotechnology
ISSN: 0957-4484
卷期: Volume:24    Issue:21
语言: English
摘要: We have performed a comparative study of ultrafast charge carrier dynamics in a range of III-V nanowires using optical pump-terahertz probe spectroscopy. This versatile technique allows measurement of important parameters for device applications, including carrier lifetimes, surface recombination velocities, carrier mobilities and donor doping levels. GaAs, InAs and InP nanowires of varying diameters were measured. For all samples, the electronic response was dominated by a pronounced surface plasmon mode. Of the three nanowire materials, InAs nanowires exhibited the highest electron mobilities of 6000 cm(2) V-1 s(-1), which highlights their potential for high mobility applications, such as field effect transistors. InP nanowires exhibited the longest carrier lifetimes and the lowest surface recombination velocity of 170 cm s(-1). This very low surface recombination velocity makes InP nanowires suitable for applications where carrier lifetime is crucial, such as in photovoltaics. In contrast, the carrier lifetimes in GaAs nanowires were extremely short, of the order of picoseconds, due to the high surface recombination velocity, which was measured as 5.4 X 10(5) cm s(-1). These findings will assist in the choice of nanowires for different applications, and identify the challenges in producing nanowires suitable for future electronic and optoelectronic devices.
相关主题: TRANSPORT-COEFFICIENTS, PLASMON RESONANCES, PHYSICS, APPLIED, PHOTOLUMINESCENCE, MOBILITY, MATERIALS SCIENCE, MULTIDISCIPLINARY, SILICON, NANOSCIENCE & NANOTECHNOLOGY, INDIUM-PHOSPHIDE NANOWIRES, SURFACE RECOMBINATION VELOCITY, DYNAMICS, CARRIER LIFETIME, CORE-SHELL NANOWIRES, Nanowires - radiation effects, Indium - chemistry, Nanowires - ultrastructure, Gallium - chemistry, Semiconductors, Indium - radiation effects, Materials Testing, Electric Conductivity, Gallium - radiation effects, Radiation Dosage, Particle Size, Nanowires - chemistry, Terahertz Radiation, Phosphines - chemistry, Terahertz Spectroscopy - methods, Phosphines - radiation effects, Arsenicals - chemistry, Arsenicals - radiation effects, Index Medicus,

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