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期刊名称: Nanotechnology
Volume:12    Issue:4        Page:485-490
ISSN:0957-4484

Electrostatic force microscopy: principles and some applications to semiconductors期刊论文

作者: Girard Paul
DOI:10.1088/0957-4484/12/4/321

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页码: 485-490
被引频次: 186
出版者: IOP Publishing,IOP PUBLISHING LTD
期刊名称: Nanotechnology
ISSN: 0957-4484
卷期: Volume:12    Issue:4
语言: English
摘要: The current state of the art of electrostatic force microscopy (EFM) is presented. The principles of EFM operation and the interpretation of the obtained local voltage and capacitance data are discussed. In order to show the capabilities of the EFM method, typical results for semiconducting nanostructures and lasers are presented and discussed. Improvements to EFM and complementary electrical methods using scanning microscopy demonstrate the continuing, interest in electrical probing at the nanoscale range.
相关主题: PHYSICS, APPLIED, ENGINEERING, MULTIDISCIPLINARY, MATERIALS SCIENCE, MULTIDISCIPLINARY, DEVICES, TIP, ATOMIC-RESOLUTION, SCANNING RESISTANCE MICROSCOPY, KELVIN PROBE MICROSCOPY, ULTRAHIGH-VACUUM, NANOMETER-SCALE,

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