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作者 : 赵云 ;  
答辩时间 : 2016-05-01
论文类型 : 博士
学位授予单位 : 中国科学院研究生院
论文总页码 : 116
中文关键词 : 石墨烯;;免转移;;GaN LED;;剥离;;浸润层
英文关键词 : graphene;;transfer-free;;GaN LED;;lift-off;;wetting layer
中文摘要 : 2014年,发明高效蓝光二极管的三位日裔获得诺贝尔物理学奖标志着商用氮化镓(Gallium Nitride,GaN)基发光二极管(Light-emitting Diode,LED)技术已经发展成熟。LED由于其效率高、体积小、绿色环保等优良性能而被广泛应用,正逐步成为照明的主流光源,必将照亮人类的未来。2010年,发现石墨烯的两位科学家获得诺贝尔物理学奖点燃了科技界研究石墨烯的热情。石墨烯是六角形蜂窝状晶格组成的二维晶体结构,有着独特而优异的性质,尤其是光电性能优异,所以人们的研究主要集中在石墨烯光电性质的研究,希望石墨烯在光电领域大显身手带领人类进入石墨烯时代。本论文围绕石墨烯在GaN基LED当中的应用研究,以寻找石墨烯在GaN LED当中的应用为目标,在GaN表面直接生长石墨烯透明电极,利用叠层石墨烯生长自支撑GaN衬底,石墨烯的浸润性和石墨烯浸润层GaN LED制备及性能分析等方面进行了一些探索性研究工作。主要研究工作和创新点如下:(1)实现了无催化剂直接在GaN LED表面生长石墨烯。甲烷作为碳源在GaN LED表面直接生长石墨烯透明电极的过程中,GaN LED几乎没有发生热退化;优化了石墨烯生长条件,提出了可能的机理解释:GaN表面Ga原子的催化。考虑到乙炔作为碳源可以降低生长温度,从而减小石墨烯生长过程中对GaN LED性能的影响。利用乙炔生长得到了石墨烯,同时研究了碳源、生长温度、生长气压对石墨烯生长的影响。(2)利用叠层石墨烯作为剥离牺牲层,成功的得到了自剥离的GaN外延膜。在石墨烯的生长转移过程中,注意到叠层石墨烯间的作用力是物理吸附,然后利用外延生长中的应力克服该物理吸附力从而达到外延层剥离的目的。分析了自剥离的过程,验证了自剥离的原理。分析比较了叠层石墨烯在不同氟化功率下对自支撑GaN质量的影响。较薄的GaN自支撑衬底和可重复利用的蓝宝石基底降低了自支撑GaN的成本,该方法是极有潜力的一种GaN同质衬底制备技术。(3)石墨烯浸润性及石墨烯纳米鼓发电研究。对石墨烯在微米孔/柱阵列上的浸润行为进行了研究,对于平面衬底和图形化的衬底,当石墨烯形貌与衬底形貌一致时,石墨烯表现为浸润性部分透明。对石墨烯纳米鼓阵列发电性能进行了测试分析,研究表明感应电流的方向由石墨烯纳米鼓的运动方向决定,电流的大小与石墨烯振幅紧密相关。提出了一种可能的机理解释:石墨烯边缘磁距下的电磁感应。(4)在c面蓝宝石上生长得到了免转移的石墨烯薄膜,为制备覆盖有石墨烯浸润层的c面蓝宝石衬底提供了一种新方法;研究了石墨烯作为浸润层外延III族氮化物(III-N)的优势:增加金属原子在石墨烯上的迁移能力;释放紧邻石墨烯外延层应力。制备了石墨烯浸润层LED并对其性能进行了分析。石墨烯的引入增加了衬底表面的粗糙度,带来了类似于纳米图形衬底的作用,增加了光的提取效率。石墨烯浸润层的LED改善了LED器件的电学性能,提高了光输出功率,但是在光谱和漏电流方面要比长在蓝宝石上的LED器件差。
英文摘要 : In 2014, three Japanese, who invention of efficient blue-light LED, won The Nobel Prize in Physics.This marks that commercial gallium nitride (GaN) based Light-emitting Diode (LED) technology has matured. LED has been widely used because of its high efficiency, small size, environmental protection, and other excellent performance.LED is gradually becoming the mainstream of lighting sources, will lighting the future of mankind.In 2010, Two scientists who discover the graphene won The Nobel Prize in Physics. It ignited the enthusiasm of the scientific and technological research on graphene. Graphene is a two-dimensional crystal structure consisted of the hexagonal honeycomb lattice. It has a unique and excellent properties, especially excellent in the optical and electrical properties, so scientists research focuses on the optical and electrical properties of graphene, graphene want to play an active role in the photovoltaic sector and will lead mankind to era of graphene.This thesis, investigations on the application of graphene in GaN LED, aim to find some graphene’s applications in GaN LED. Our exploratory research work consist of direct growth of graphene on GaN, growth of free-standing GaN by using stacked graphene, the wettability of graphene, the preparation for GaN LED with graphene wetting layer and its performance analysis. The main work is as follows: (1) Direct growth of graphene on GaN LED without extra catalyst has been achieved. When methane as a carbon source in the process of direct growth of graphene transparent electrodes on GaN LED, GaN LED is almost no thermal degradation; graphene growth condition is optimized; possible mechanism is proposed: the Ga atoms on GaN surface is catalyst. Considering the acetylene as a carbon source can reduce the growth temperature, thereby, it can reduce the influence to the performance of GaN LED in the graphene growth process. the effect of carbon source, growth temperature and pressure are also studied.(2) Self lift-off GaN epitaxial film has been fabricated by using one graphene stacking on another graphene as sacrificial layer. We note the force between two stacking graphene is physical adsorption in the process of graphene transfer. When the stress in heteroepitaxy over come it, the purpose of lift-off epitaxy can be achieved. The process of self lift-off is analysed and the principle of self lift-off is verifed. The influences of stacking graphene with different fluorination power on the quality of free-standing GaN are compared. The thinner free-standing GaN substrate and the reusable sapphire substrate reduced the cost of GaN homogeneous substrate. It is a very promising technique for preparing GaN homogeneous substrate.(3) Investigations on the wettability of graphene and the graphene nanodrums power.When the morphology of graphene fit to the morphology of substrate, the graphene wettability is partially transparent, no matter plane substrate or patterned substrate. The performances of graphene nondrums were tested. The experiment shows that the direction of induced current is determined by the direction of graphene nanodrums movement, the size of the induced current is closely related to amplitude of graphene. We propose a possible mechanism: electromagnetic induction from the magnetic graphene edges.(4) A transfer-free graphene was grown on c-plane sapphire, this provide a new method for fabricating the graphene covered c-plane sapphire. The advantages of graphene as wetting layer to epitaxial growth III-nitride (III-N): The increase in the migration of metal atoms on the graphene, release stress in epitaxial layer which is next to graphene. GaN LED with graphene wetting layer was prepared and its performance is analysed. The graphene wetting layer increased the surface roughness of the substrate, which is similar to the role of nano-patterned substrate, it can increase the light extraction efficiency. The LED with graphene wetting layer improves the electrical perf

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